Title :
X- and Ku-band amplifiers with GaAs Schottky-barrier FETS
Author_Institution :
IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Abstract :
This paper will report on two low-power FET amplifiers: 8.2 GHz with 17.5-dB gain and 1.3-GHz bandwidth; 9.5-14.3 GHz with 8.5-dB gain.
Keywords :
Circuit noise; Dielectric constant; Frequency; Gallium arsenide; Laboratories; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; Noise figure; Stripline;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155105
