Title :
Ion-implanted complementary MOS transistors in low-voltage circuits
Author :
Swanson, R. ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
Ion-implanted complementary MOS integrated circuits which can operate at supply voltages less than 0.4 V have been fabricated. Their behavior will be described by a new theory of MOST characteristics which is valid near threshold.
Keywords :
Boron; CMOS integrated circuits; CMOS technology; Digital circuits; Equations; Integrated circuit technology; Inverters; Low voltage; MOSFETs; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155118
