Title :
Two-dimensional simulation of devices with IET and allowing impact ionization
Author :
Prokhorov, E.D. ; Pavlenko, D.V.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ.
Abstract :
Proposed in this paper is the design of numerical model of the semiconductor devices on basis of IET (Intervalley Electron Transition), allowing impact ionization. The approach ensures iterative process stability under conditions of impact ionization
Keywords :
impact ionisation; iterative methods; semiconductor devices; IET; impact ionization; intervalley electron transition; iterative process stability; numerical model; semiconductor device design; Avalanche breakdown; Double heterojunction bipolar transistors; Electron devices; Gallium arsenide; Helium; Heterojunction bipolar transistors; Impact ionization; Neodymium; Semiconductor diodes; Temperature dependence;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565001
