Title :
Compact CMOS power amplifier with trident output drivers
Author :
Lee, Bang W. ; Bae, Il S. ; Whang, In H.
Author_Institution :
Samsung Electronics Co., KyungGi-Do, South Korea
Abstract :
A novel circuit topology that requires only an additional 10 MOS transistors to convert a conventional transconductance amplifier into a CMOS power amplifier is presented. An amplifier with a die area of 800×250 μm2 in a 4-μm double-poly CMOS technology has been fabricated and tested. Measured results show 90 dB DC gain, 0.9-V/μs slew rate, and 0.04% distortion with 300 Ω and 1000-pF load with a 0.1-mW power dissipation
Keywords :
CMOS integrated circuits; linear integrated circuits; power amplifiers; power integrated circuits; 0.1 mW; 4 micron; 90 dB; CMOS power amplifier; MOS transistors; circuit topology; double-poly CMOS technology; power dissipation; trident output drivers; CMOS technology; Circuit testing; Circuit topology; Distortion measurement; Driver circuits; Gain measurement; MOSFETs; Power amplifiers; Power measurement; Transconductance;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230110
