Title :
Application of GaAs Schottky-gate FETs in microwave amplifiers
Author :
Liechti, C. ; Tillman, R.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Wideband input and output coupling networks for microwave amplifier stages incorporating GaAs MESFETs with 1-μm Schottky-gate will be described. Third-order intermodulation distortion of the transistors will also be discussed.
Keywords :
Broadband amplifiers; FETs; Gallium arsenide; Impedance matching; Inductance; MESFETs; Microwave amplifiers; Microwave filters; Noise figure; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155140
