Title :
High-density static bipolar memory
Author_Institution :
IBM Laboratories, Boeblingen, Germany
Abstract :
A static bipolar memory approach with a 3.1-mil2cell in standard technology affording a 4k-bit chip with 50-ns access time at 0.1 μW/bit standby power will be described.
Keywords :
Current supplies; Drives; FETs; Joining processes; Laboratories; Logic circuits; Logic devices; Metallization; Power dissipation; Read-write memory;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155148
