Title :
Excess noise in stable and injection-locked IMPATT diode amplifiers at high-power levels
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
The mechanisms responsible for the excess noise in IMPATT diode power amplifiers have been investigated. The stable amplifier has been found to have a lower effective noise figure than an injection-locked oscillator with the same output power.
Keywords :
Diodes; Frequency modulation; High power amplifiers; Impedance; Low-frequency noise; Noise figure; Noise level; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155155
