DocumentCode :
2855038
Title :
Characterization of charge-coupled device line and area-array imaging at low light levels
Author :
White, M. ; Lampe, D. ; Mack, I. ; Blaha, F.
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
Volume :
XVI
fYear :
1973
fDate :
14-16 Feb. 1973
Firstpage :
134
Lastpage :
135
Abstract :
A cell design affording compacting of an active CCD sensor, interline shift sensor, transfer gate and stopper diffusion into 2-mil centers with 5-m aluminum lines and spacings in a 75 × 100 element array will be described. Coherent readout technique removes Nyquist noise and suppresses clock feedthroughs.
Keywords :
Charge coupled devices; Circuit noise; Clamps; Delay lines; Dynamic range; Noise generators; Optical coupling; Semiconductor device noise; Silicon; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1973.1155159
Filename :
1155159
Link To Document :
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