Physical Modeling and Parameter Extraction Procedure for p-i-n Diodes with Lifetime Control

Author

Lu, L. ; Bryant, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC

Volume

3

fYear

2006

fDate

8-12 Oct. 2006

Firstpage

1450

Lastpage

1456

Abstract

A physics-based model for diodes with lifetime control has been recently proposed. The model is an extension of a diode model that uses a Fourier series solution for the ambipolar diffusion equation in the drift region. In this paper a parameter extraction procedure for the diode with lifetime control is proposed. The procedure requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite element simulations. The physics-based model using the parameters so extracted shows excellent agreement with experimental results

Keywords

finite element analysis; p-i-n diodes; power semiconductor diodes; semiconductor device models; Fourier series; ambipolar diffusion equation; finite element simulations; lifetime control; p-i-n diodes model; parameter extraction procedure; physical modeling; Equations; Finite element methods; Fourier series; P-i-n diodes; Parameter extraction; Power semiconductor switches; Predictive models; Semiconductor diodes; Switching converters; Switching loss; Power semiconductor modeling; lifetime control; physics-based model; pin diode model; variable lifetime;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE

Conference_Location

Tampa, FL

ISSN

0197-2618

Print_ISBN

1-4244-0364-2

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/IAS.2006.256721

Filename

4025408