Title :
Physics-Based Model of IGBT Including MOS Side Two-Dimensional Effects
Author :
Lu, L. ; Bryant, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC
Abstract :
An existing physics-based model, which has proven accurate for inductive turn-off and inductive turn-on simulations, is modified to account for lateral-gate IGBT two-dimensional effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite-element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results
Keywords :
finite element analysis; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT models; JFET region; MOS side 2D effects; carrier distribution; finite-element simulations; physics based model; Anodes; Cathodes; Charge carrier density; Charge carrier processes; Electron emission; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Predictive models; Threshold voltage; IGBT model; Power semiconductor modeling; physics-based model;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256722
