DocumentCode :
2855186
Title :
Mesh source type microwave power FET
Author :
Fukuta, Masahiro ; Mimura, Takashi ; Tujimura, I. ; Furumoto, A. ; Dazai, K.
Author_Institution :
Fujitsu, Ltd., IC Design Division, Kobe, Japan
Volume :
XVI
fYear :
1973
fDate :
14-16 Feb. 1973
Firstpage :
84
Lastpage :
85
Keywords :
Assembly; Current-voltage characteristics; Epitaxial layers; Etching; Frequency; Gallium arsenide; Microwave FETs; Power generation; Shape; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1973.1155168
Filename :
1155168
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2855186
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