Analytical study of impact ionization and subthreshold current in submicron n-MOSFET

Author

Jharia, Bhavana ; Sarkar, S. ; Agarwal, R.P.

Author_Institution

Dept. of Electron. & Comput. Eng., Indian Inst. of Technol., Roorkee, India

fYear

2005

fDate

21-23 March 2005

Firstpage

72

Lastpage

76

Abstract

The effect of impact ionization in subthreshold operation of an n-MOSFET is studied. Analysis shows that the effect of impact ionization cannot be neglected in the subthreshold region of operation of the submicron MOSFET. This effect is enhanced at larger drain voltages. Gate bias and oxide thickness controls the effect of impact ionization. The effect of impact ionization is through the gate and drain bias dependence of the maximum electric field. The subthreshold current increases when the gate oxide is thinned. This is because of the increase in impact ionization due to the increase in electric field.

Keywords

MOS integrated circuits; MOSFET; VLSI; electric current; electric fields; electric potential; impact ionisation; semiconductor device models; VLSI chip; analytical model; drain bias; drain voltages; electric field; gate bias; gate oxide thickness; impact ionization; submicron MOSFET; submicron n-MOSFET; subthreshold current; Impact ionization; Low voltage; MOSFET circuits; Power dissipation; Strontium; Subthreshold current; Temperature control; Thickness control; Very large scale integration; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on

Print_ISBN

0-7695-2301-3

Type

conf

DOI

10.1109/ISQED.2005.22

Filename

1410560