Title :
Characteristics of microwave detectors with low barrier planar Schottky diodes
Author :
Shashkin, V.I. ; Vaks, V.L. ; Danil´tsev, V.M. ; Maslovsky, A.V. ; Murel, A.V. ; Nikiforov, S.D. ; Chechenin, Yu.I.
Author_Institution :
Inst. for Phys. of Microstruct., RAS, Nizhny Novgorod
Abstract :
The design principles and technology of fabricating sensitive microwave detectors on the basis of low barrier (0.2-0.3 eV) Schottky diodes are developed. A family of diodes and diode-based broadband detectors featuring 1000-5000 V/W sensitivity and 10-11 W Hz -1/2 threshold power at millimeter wavelengths and zero-bias operation are fabricated
Keywords :
Schottky diodes; microwave detectors; millimetre wave detectors; Schottky diode; diode-based broadband detector; microwave detector; millimeter wavelength; zero-bias operation; Detectors; Frequency; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Schottky diodes;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565068
