New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes

Author

Arsentiev, I.N. ; Belyaev, A.E. ; Bobyl, A.V. ; Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Konnikov, S.G. ; Kudryk, Ya.Ya. ; Milenin, V.V. ; Taraso, I. S V ; Markovsky, E.P. ; Rusu, E.V.

Author_Institution

Ioffe Physico-Tech. Inst., RAN, Sankt-Peterburg

Volume

2

fYear

2005

fDate

16-16 Sept. 2005

Firstpage

633

Abstract

We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially prepared porous n⁺-InP and n⁺-GaAs substrates. The structural properties of epitaxial layers and output parameters of the Gunn diodes made on their basis were studied. The InP and GaAs epitaxial layers were grown in the same conditions on the standard substrates. The advantages of the epitaxial layers grown on porous substrates and Gunn diodes made on their basis are demonstrated

Keywords

Gunn diodes; III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; GaAs; GaAs epitaxial layer; Gunn diode; InP; InP epitaxial layer; substrate; Buffer layers; Epitaxial layers; Gallium arsenide; Gold; Gunn devices; Indium phosphide; Ohmic contacts; Physics; Semiconductor diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology, 2005 15th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

966-7968-80-4

Type

conf

DOI

10.1109/CRMICO.2005.1565069

Filename

1565069