DocumentCode :
2855574
Title :
Analysis and optimization of static power considering transition dependency of leakage current in VLSI circuits
Author :
Abdollahi, Afshin ; Fallah, Farzan ; Pedram, Massoud
Author_Institution :
Univ. of Southern California, CA, USA
fYear :
2005
fDate :
21-23 March 2005
Firstpage :
77
Lastpage :
82
Abstract :
We show that leakage current in VLSI circuits is not only a function of the current state (input combination) of a combinational circuit but also is dependent on the state history (previous input combinations). As an example application of the transition-dependent leakage model, we extend a known technique for calculating and applying the minimum leakage input vector to a combinational circuit in the standby mode to one which calculates and applies a pair of input vectors to initialize the circuit to the minimum leakage configuration.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; combinational circuits; integrated circuit modelling; leakage currents; optimisation; semiconductor device models; CMOS circuits; MOS transistors; VLSI circuits; combinational circuit; leakage current transition dependency; standby mode; static power; transition-dependent leakage model; Combinational circuits; History; Leakage current; Logic gates; MOSFETs; Stacking; Subthreshold current; Tunneling; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on
Print_ISBN :
0-7695-2301-3
Type :
conf
DOI :
10.1109/ISQED.2005.18
Filename :
1410561
Link To Document :
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