Title :
High-speed solar blind MSM-photodetectors
Author :
Averine, S.V. ; Kuznetzov, P.I. ; Zhitov, V.A. ; Zacharov, L.Yu. ; Yakuscheva, G.G. ; Dmitriev, M.D.
Author_Institution :
Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow
Abstract :
The metal-semiconductor-metal (MSM) diodes are very attractive for short wavelength detection due to their simple structure, high-speed response and low dark current. In this work we present the results of fabrication of AlGaN MSM photodetectors on sapphire substrates. Two types of heterostructures are fabricated and analyzed. The detector´s characteristics are studied for different Schottky barrier metals
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; AlGaN; MSM; Schottky barrier metal; dark current; detectors characteristics; heterostructure fabrication; high-speed response; metal-semiconductor-metal diode; sapphire substrate; solar blind MSM-photodetector; wavelength detection; Aluminum gallium nitride; Dark current; Detectors; Gallium nitride; IEEE catalog; Microwave technology; Organizing; Photodiodes; Physics; Schottky barriers;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565079
