Title :
Selective wet etching process for AlGaAs/InGaAs pHEMT fabrication
Author :
Gusenkova, A.V. ; Maleev, N.A. ; Zhukov, A.E. ; Vasil´ev, A.P. ; Shulenkov, A.S.
Author_Institution :
Minsk R&D Inst. of Radiomater.
Abstract :
The designed selective wet etching process for AlGaAs/InGaAs pHEMT is discussed. Proposed technology provides precise control of channel etching and demonstrates high uniformity of device characteristics
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; power HEMT; AlGaAs-InGaAs; high electron mobility transistor; pHEMT fabrication; precise control; selective wet etching process; Electrons; Etching; Fabrication; Gallium arsenide; IEEE catalog; Indium gallium arsenide; Microwave technology; Organizing; PHEMTs;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565081
