Title :
A high-speed integrated optoelectronic photoreceiver
Author :
Morikuni, J.J. ; Ketterson, A.A. ; Tong, M. ; Seo, J.W. ; Nummila, K. ; Kang, S.M. ; Adesida, I. ; Cheng, K.Y.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
The authors present a high-speed optoelectronic photoreceiver, specifically designed for use in optical interconnections. This photoreceiver is composed of an MSM (metal-semiconductor-metal) photodetector coupled with a HEMT (high electron mobility transistor) transimpedance amplifier. Through the use of the lattice-mismatched materials system of AlGaAs/InGaAs/GaAs and quarter-micron gate length HEMTs, speeds in excess of 4 GHz as well as transimpedance gains of over 50 dB were achieved, well matching the results of the iSMILE simulator. The high performance of the pseudomorphic HEMTs was reflected in their transit frequency of f1=66 GHz. This design also included an MSM photodetector with a measured dark current of less than 10 nA
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; optical receivers; photodetectors; 0.25 micron; 10 nA; 50 dB; 66 GHz; AlGaAs-InGaAs-GaAs; HEMT transimpedance amplifier; MSM photodetector; dark current; gate length; high-speed integrated optoelectronic photoreceiver; iSMILE simulator; lattice-mismatched materials system; optical interconnections; pseudomorphic HEMTs; transimpedance gains; transit frequency; Gallium arsenide; HEMTs; High speed integrated circuits; Indium gallium arsenide; MODFETs; Optical amplifiers; Optical design; Optical interconnections; Optical materials; Photodetectors;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230249
