Title :
A-4096 bit one-transistor per-bit RAM with internal timing and low dissipation
Author :
Lambrechtse, C. ; Salters, R. ; Boonstra, L.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
A 4k RAM with 150-mW dissipation and 12.7-mm2area, fitting a standard 18-pin DIL package, has been developed. Internal timing is realized through a fast-shift register.
Keywords :
Circuits; Clocks; MOS capacitors; Random access memory; Read-write memory; Semiconductor device measurement; Shift registers; Signal generators; Timing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155207
