• DocumentCode
    2855846
  • Title

    A static RAM with normally-off-type Schottky barrier FETs

  • Author

    Suzuki, Satoshi ; Nagahashi, Y. ; Tanaka, T. ; Muta, Hidemasa ; Okabayashi, H.

  • Author_Institution
    Nippon Electric Co., Ltd., Kawasaki, Japan
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    An ion-implanted 256-bit diode-coupled flip-flop with normally-off-type Schottky barrier FETS will be described. All inputs except chip-enable have CML compatibility.
  • Keywords
    Conductivity; Coupling circuits; FETs; Random access memory; Read-write memory; Schottky barriers; Schottky diodes; Semiconductor diodes; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155211
  • Filename
    1155211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855846