Title :
A static RAM with normally-off-type Schottky barrier FETs
Author :
Suzuki, Satoshi ; Nagahashi, Y. ; Tanaka, T. ; Muta, Hidemasa ; Okabayashi, H.
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
Abstract :
An ion-implanted 256-bit diode-coupled flip-flop with normally-off-type Schottky barrier FETS will be described. All inputs except chip-enable have CML compatibility.
Keywords :
Conductivity; Coupling circuits; FETs; Random access memory; Read-write memory; Schottky barriers; Schottky diodes; Semiconductor diodes; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155211
