Accurate MOS threshold voltage detector for bias circuitry

Author

Alini, R. ; Baschirotto, A. ; Castello, R. ; Montecchi, F.

Author_Institution

Dipartimento di Elettronica, Pavia Univ., Italy

Volume

3

fYear

1992

fDate

10-13 May 1992

Firstpage

1280

Abstract

A circuit for the detection of the threshold voltage V _TH of MOS devices is presented. The basic scheme proposed here is implemented in BiCMOS technology but can also be applied in any standard CMOS process. The deviation of the detected V_TH from the actual (or extrapolated) one is analytically estimated, taking into account the effects due to channel length modulation and mobility modulation. The results obtained show that the error at ambient temperature is lower than 0.6% for all values of V_DD larger than 3.25 V, and for temperatures in the range -25°C to 125°C the error is never higher than 4%

Keywords

BiCMOS integrated circuits; MOS integrated circuits; electric sensing devices; insulated gate field effect transistors; integrated circuit testing; voltage measurement; -25 to 125 degC; BiCMOS technology; CMOS process; MOS threshold voltage detector; bias circuitry; channel length modulation; mobility modulation; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Detectors; MOS devices; MOSFETs; Temperature dependence; Threshold voltage; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.230271

Filename

230271