Title :
Radio-frequency interference effects in semiconductor devices
Author :
Klyuchnik, A.V. ; Solodov, A.V. ; Romanovsky, V.N. ; Tyulpakov, V.N. ; Zaleshin, A.V.
Author_Institution :
Moscow Radiotech. Inst., Russian Acad. of Sci., Moscow
Abstract :
Radio-frequency interference (RFI) effects in semiconductor devices are considered. The dependence of microwave-induced interference signal on microwave intensity and frequency is analyzed
Keywords :
microwave devices; radiofrequency interference; semiconductor devices; RFI effects; microwave intensity; microwave-induced interference signal; radio-frequency interference; semiconductor devices; EMP radiation effects; Electromagnetic radiative interference; Microwave devices; Microwave integrated circuits; Microwave technology; Radio frequency; Radiofrequency integrated circuits; Radiofrequency interference; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565092
