DocumentCode
2855906
Title
Radio-frequency interference effects in semiconductor devices
Author
Klyuchnik, A.V. ; Solodov, A.V. ; Romanovsky, V.N. ; Tyulpakov, V.N. ; Zaleshin, A.V.
Author_Institution
Moscow Radiotech. Inst., Russian Acad. of Sci., Moscow
Volume
2
fYear
2005
fDate
16-16 Sept. 2005
Firstpage
683
Abstract
Radio-frequency interference (RFI) effects in semiconductor devices are considered. The dependence of microwave-induced interference signal on microwave intensity and frequency is analyzed
Keywords
microwave devices; radiofrequency interference; semiconductor devices; RFI effects; microwave intensity; microwave-induced interference signal; radio-frequency interference; semiconductor devices; EMP radiation effects; Electromagnetic radiative interference; Microwave devices; Microwave integrated circuits; Microwave technology; Radio frequency; Radiofrequency integrated circuits; Radiofrequency interference; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1565092
Filename
1565092
Link To Document