Title :
A device characterization and circuit design procedure for realizing high-power millimeter-wave IMPATT diode amplifiers
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA, USA
Abstract :
A characterization technique affording realization of Ka-band (33-42 GHz) IMPATT amplifiers exhibiting 4% generation efficiencies, 200-mW added power and 5-GHz bandwidths with device temperatures of 200°C will be described.
Keywords :
Bandwidth; Character generation; Circuit synthesis; Diodes; High power amplifiers; Millimeter wave circuits; Millimeter wave technology; Power amplifiers; Power generation; Temperature;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155216
