DocumentCode
2855988
Title
Wunsch-Bell criterion dependency for silicon FET
Author
Gordienko, Yu.E. ; Zuev, S.A. ; Starostenko, V.V. ; Tereshchenko, V.Yu. ; Shadrin, A.A. ; Osadchuk, A.E.
Author_Institution
Kharkov Nat. Univ. of Radioeng.
Volume
2
fYear
2005
fDate
16-16 Sept. 2005
Firstpage
697
Abstract
The results of electrothermal process calculations in FET are given. Calculations performed in avalanche breakdown mode till Au (used as gate substrate) melting point and achieved in any lattice point in active FET area. Discrete FET model is used to perform calculations
Keywords
avalanche breakdown; field effect transistors; melting point; FET; Wunsch-Bell criterion; avalanche breakdown mode; electrothermal process calculation; field effect transistor; lattice point; melting point; EMP radiation effects; FETs; IEEE catalog; Microwave technology; Organizing; Semiconductor devices; Semiconductor diodes; Solid state circuits; Threshold voltage; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1565098
Filename
1565098
Link To Document