Title :
A 1-mil2single-transistor memory cell in N-silicon-gate technology
Author :
Stein, K. ; Friedrich, H.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A cell design using a 4-μm width diffused bit line and a 5μm width aluminum word line contacted to a silicon gate over the channel region of the selection transistor of the memory cell will be described. Design of a sense-refresh circuit which can be used for 256 of the cells per amp will also be covered.
Keywords :
Distributed amplifiers; Educational programs; Educational technology; Paper technology; Random access memory; Read-write memory; Signal processing; Switching circuits; Threshold voltage; Video recording;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155226
