Title :
Bipolar versus FET for microwaves
Abstract :
Significant advances in the GaAs field-effect transistor technology have resulted in an active microwave two-port device for circuit application through the Kuband. These new devices offer low-noise performance and very recently have demonstrated substantial power generation properties. It is therefore anticipated that strong competition will result.
Keywords :
Appraisal; Availability; Bipolar transistors; Gallium arsenide; Microwave FETs; Microwave circuits; Microwave devices; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155229
