Title :
The power loss of the PWM voltage-fed inverter
Author :
Ikeda, Yoshitaka ; Itsumi, Jiroh ; Funato, Hirohito
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
Abstract :
The power loss of the valve devices in pulsewidth-modulated (PWM) inverters operated with relatively high carrier frequency is discussed. The devices covered are bipolar transistors, MOSFETs, and antiparalleled diodes. On-state loss and switching loss are treated separately, on the basis of the control method and the circuit conditions. The resultant allowable load current is discussed from the viewpoint of switching frequency.<>
Keywords :
bipolar transistors; insulated gate field effect transistors; invertors; losses; pulse width modulation; semiconductor diodes; switching; MOSFET; PWM voltage-fed inverter; antiparalleled diodes; bipolar transistors; control method; high carrier frequency; on-state loss; power loss; switching frequency; switching loss; Bipolar transistors; Circuits; Diodes; Frequency; MOSFETs; Pulse inverters; Pulse width modulation inverters; Switching loss; Valves; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18144
