DocumentCode
2856749
Title
The power loss of the PWM voltage-fed inverter
Author
Ikeda, Yoshitaka ; Itsumi, Jiroh ; Funato, Hirohito
Author_Institution
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
fYear
1988
fDate
11-14 April 1988
Firstpage
277
Abstract
The power loss of the valve devices in pulsewidth-modulated (PWM) inverters operated with relatively high carrier frequency is discussed. The devices covered are bipolar transistors, MOSFETs, and antiparalleled diodes. On-state loss and switching loss are treated separately, on the basis of the control method and the circuit conditions. The resultant allowable load current is discussed from the viewpoint of switching frequency.<>
Keywords
bipolar transistors; insulated gate field effect transistors; invertors; losses; pulse width modulation; semiconductor diodes; switching; MOSFET; PWM voltage-fed inverter; antiparalleled diodes; bipolar transistors; control method; high carrier frequency; on-state loss; power loss; switching frequency; switching loss; Bipolar transistors; Circuits; Diodes; Frequency; MOSFETs; Pulse inverters; Pulse width modulation inverters; Switching loss; Valves; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/PESC.1988.18144
Filename
18144
Link To Document