Title :
Modelling of high voltage IGBT with easy parameter extraction
Author :
Ji, Shiqi ; Lu, Ting ; Zhao, Zhengming ; Yuan, Liqiang
Author_Institution :
Dept. of Electr. Eng., Univ. of Tsinghua, Beijing, China
Abstract :
An insulated gate bipolar transistor (IGBT) model based on gate drive voltage is proposed in this paper. The parameters of the model can be easily extracted referring to the dynamic characteristics in each period of transient process. The IGBT transient was analyzed with gate drive voltage in detail. The IGBT model was implemented in PSIM and the nonlinear parameters were described by constants and switches in terms of the analyses. The model parameters were provided for a typical high voltage IGBT (FZ600R65KF1). The test experiment was done and the accuracy of the model was verified. The IGBT model was applied to simulate the transient process with gate active clamp circuit. Experimental and simulated waveforms were compared.
Keywords :
insulated gate bipolar transistors; FZ600R65KF1; IGBT transient; PSIM; easy parameter extraction; gate drive voltage; high voltage IGBT modelling; insulated gate bipolar transistor model; nonlinear parameters; Capacitors; Clamps; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Resistance; Transient analysis; IGBT model; gate active clamp circuit; gate drive voltage; transient process;
Conference_Titel :
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location :
Harbin
Print_ISBN :
978-1-4577-2085-7
DOI :
10.1109/IPEMC.2012.6258985
