• DocumentCode
    2856823
  • Title

    A subnanosecond switching circuit

  • Author

    Cahen, Olivier ; Cachier, G. ; Puron, J.-P.

  • Author_Institution
    Thompson-CSF, Orsay, France
  • Volume
    XVII
  • fYear
    1974
  • fDate
    15-13 Feb. 1974
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    A process, including the use of electron and ion beams, has made it possible to develop very fast and low-power switching circuits. Active transistors are one micron-gate silicon Schottky-barrier FETs.
  • Keywords
    Capacitance; Electron beams; FETs; Gold; Ion implantation; Palladium; Resistors; Silicides; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1974.1155274
  • Filename
    1155274
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2856823