Title :
A subnanosecond switching circuit
Author :
Cahen, Olivier ; Cachier, G. ; Puron, J.-P.
Author_Institution :
Thompson-CSF, Orsay, France
Abstract :
A process, including the use of electron and ion beams, has made it possible to develop very fast and low-power switching circuits. Active transistors are one micron-gate silicon Schottky-barrier FETs.
Keywords :
Capacitance; Electron beams; FETs; Gold; Ion implantation; Palladium; Resistors; Silicides; Switching circuits; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155274
