Title :
High-speed integrated logic with GaAs MESFETs
Author :
Van Tuyl, R. ; Liechti, C.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA, USA
Abstract :
A high-speed logic gate has been fabricated in GaAs. The circuit elements are Schottky diodes and MESFETs. The unloaded propagation delay is 60 ps with typical average power dissipation of 85 mW.
Keywords :
Circuit testing; Delay effects; Gallium arsenide; High speed integrated circuits; Logic circuits; Logic gates; Logic testing; MESFETs; Substrates; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155276
