Title :
Simulating and improving microelectronic device reliability by scaling voltage and temperature
Author :
Xiaojun, L. ; Walter, Joerg D. ; Bernstein, Joseph B.
Author_Institution :
Microelectron. Reliability Eng., Maryland Univ., College Park, MD, USA
Abstract :
The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit design; oscillators; power consumption; CMOS ring oscillator; derating model; device operation parameters; device reliability; microelectronic device reliability; power dissipation; scaling relations; scaling voltage; simulation; stress conditions; switching speed; temperature; Circuits; Frequency; Guidelines; Internal stresses; Microelectronics; Power dissipation; Power system reliability; Ring oscillators; Temperature; Voltage;
Conference_Titel :
Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on
Print_ISBN :
0-7695-2301-3
DOI :
10.1109/ISQED.2005.110
