DocumentCode
2856990
Title
Gain estimation of RT-APD devices by means of TCAD numerical simulations
Author
Cortés, I. ; Fernández-Martínez, P. ; Flores, D. ; Hidalgo, S. ; Rebollo, J.
Author_Institution
Inst. de Microelectron. de Barcelona (IMB-CNM-CSIC), Barcelona, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
4
Abstract
The design of Reach-Through Avalanche Photodiodes (RT-APD) for medium energy X-ray detection requires a previous optimization to guarantee elevated gain at the required operation conditions. A simple methodology to estimate the gain in RT-APD devices by using TCAD numerical simulations is proposed in this work. This technique offers the possibility to predict the gain in RT-APDs as a function of the most relevant design considerations.
Keywords
avalanche breakdown; RT-APD device; TCAD numerical simulation; energy X-ray detection; gain estimation; reach-through avalanche photodiode; Anodes; Doping; Electric fields; Junctions; Semiconductor process modeling; Silicon; Substrates; Reach-Through Avalanche Photodiode (RT-APD); TCAD simulations; breakdown voltage; gain; linearity; reach-through voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744152
Filename
5744152
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