Title :
Volatge-sensor monolithically integrated in 3.3 kV IGBTs
Author :
Urresti, J. ; Flores, D. ; Hidalgo, S. ; Rebollo, J. ; Caramel, C. ; Austin, P. ; Sanchez, J.L.
Author_Institution :
Inst. de Microelectron. de Barcelona, CSIC, Bellaterra, Spain
Abstract :
This work deals with the study of a voltage sensor monolithically integrated with 3.3 kV-50 A IGBT. First, the sensor operation mode is explained, and the study of its behaviour, both stationary and transient regimes, is presented for the first time. In addition, the study of its performance under inductive turn-off conditions has been made. To explore this event, physical TCAD simulations have been carried out, comparing the IGBTs with and without voltage sensor.
Keywords :
insulated gate bipolar transistors; technology CAD (electronics); voltage measurement; IGBT; current 50 A; inductive turn-off condition; physical TCAD simulation; sensor operation mode; stationary regime; transient regime; voltage 3.3 kV; voltage measurement; voltage sensor; Anodes; Insulated gate bipolar transistors; Inverters; Logic gates; Reliability; Transient analysis; IGBTs; Power applications; TCAD simulations; Voltage-Sensor; inductive Turn-off; transient characteristics;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744156
