• DocumentCode
    2857071
  • Title

    An I-IP based approach for the monitoring of NBTI effects in SoCs

  • Author

    Guardiani, C. ; Shibkov, A. ; Brambilla, A. ; Gajani, G. Storti ; Appello, D. ; Piazza, F. ; Bernardi, P.

  • Author_Institution
    Elite-DC S.r.l., Italy
  • fYear
    2009
  • fDate
    24-26 June 2009
  • Firstpage
    15
  • Lastpage
    20
  • Abstract
    In this paper we present a design for reliability methodology, with the goal of reducing the impact of transistor VTH degradation due for example to phenomena such as NBTI. It uses infrastructure IPs (I-IPs) featuring a self compensation scheme that automatically detects transistor aging effects and illustrates the design for test infrastructure used to make the SoC/System aware of the NBTI effects. This scheme is conceptually validated by using multi-level simulation and models. The discussion of possible exploitation models completes the paper.
  • Keywords
    monolithic integrated circuits; reliability; system-on-chip; transistors; I-IP based approach; NBTI effects; SoCs; multilevel simulation; negative bias temperature instability; reliability methodology; self compensation scheme; system aware; system-on-chip; test infrastructure; transistor aging effects; transistor degradation impact; Aging; CMOS technology; Degradation; Design methodology; Monitoring; Niobium compounds; Switching circuits; Timing; Titanium compounds; Very large scale integration; I-IPs; NBTI effects; SoC on-line monitoring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    On-Line Testing Symposium, 2009. IOLTS 2009. 15th IEEE International
  • Conference_Location
    Sesimbra, Lisbon
  • Print_ISBN
    978-1-4244-4596-7
  • Electronic_ISBN
    978-1-4244-4595-0
  • Type

    conf

  • DOI
    10.1109/IOLTS.2009.5195977
  • Filename
    5195977