A Monte Carlo model for the study of n-type strained Silicon Schottky diodes

A Monte Carlo investigation of charge transport in Strained Silicon Schottky diodes is presented. The effect of strain on the reverse current for several state-of-the-art barrier heights is discussed and extensively analyzed. The results show an important increase of current with strain, which allows achieving lower effective barrier heights due to the shifting of Δ₂ conduction band valleys. However, the relative improvement provided by the strain is slightly less significant for lower barrier heights due to the changes in tunneling and thermionic components of the total current.