Title :
Novel DRAM mitigation technique
Author :
Bougerol, A. ; Miller, F. ; Buard, N.
Author_Institution :
Eur. Aeronaut. Defense & Space Co., Suresnes, France
Abstract :
This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.
Keywords :
DRAM chips; error correction codes; error detection codes; fault tolerance; laser beam effects; multichip modules; DRAM cell memory; MBU; SEU; error detection-and-correcting; fault-tolerant architectures; nonsymmetrical structure; radiation mitigation technique; Aerospace electronics; Capacitors; Computer errors; Electrons; Error correction; Error correction codes; Random access memory; Redundancy; Space technology; Voltage; DRAM; Error Correcting Code; MBU; Mitigation; Radiation; SEU;
Conference_Titel :
On-Line Testing Symposium, 2009. IOLTS 2009. 15th IEEE International
Conference_Location :
Sesimbra, Lisbon
Print_ISBN :
978-1-4244-4596-7
Electronic_ISBN :
978-1-4244-4595-0
DOI :
10.1109/IOLTS.2009.5195991
