Title :
A 1024-bit bipolar RAM
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
The paper will discuss a low-power, high-performance static RAM using a compact inverted transistor flip-flop memory cell. Small chip size and conventional processing have been found to yield an economical device suited for mainframe storage applications.
Keywords :
Artificial intelligence; Current supplies; Diodes; Flip-flops; Large scale integration; Power generation economics; Random access memory; Read-write memory; Resistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155308
