Title :
A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs
Author :
Lime, F. ; Ritzenthaler, R. ; Iniguez, B. ; Miranda, E. ; Martinez, F. ; Pascal, F. ; Faynot, O.
Author_Institution :
Univ. of Tarragona (URV), Tarragona, Spain
Abstract :
This work presents an analytical explicit compact model for Ultra-Thin Body (UTB) SOI MOSFETs. It is a simplification of a previously published model for Asymetrical Double Gate MOSFETs with independent gate operation. Excellent agreements were obtained with both TCAD simulations and electrical measurements. The usefulness of the model for parameter extraction of state of the devices is also demonstrated.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; technology CAD (electronics); TCAD simulation; UTB SOI MOSFET; asymetrical double gate MOSFET; drain current; electrical measurement; ultra-thin body SOI MOSFET; Analytical models; Logic gates; MOSFETs; Mathematical model; Silicon; Silicon on insulator technology; Compact modeling; FD SOI; SOI; UTB SOI MOSFET;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744174
