DocumentCode
2857369
Title
A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs
Author
Lime, F. ; Ritzenthaler, R. ; Iniguez, B. ; Miranda, E. ; Martinez, F. ; Pascal, F. ; Faynot, O.
Author_Institution
Univ. of Tarragona (URV), Tarragona, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
4
Abstract
This work presents an analytical explicit compact model for Ultra-Thin Body (UTB) SOI MOSFETs. It is a simplification of a previously published model for Asymetrical Double Gate MOSFETs with independent gate operation. Excellent agreements were obtained with both TCAD simulations and electrical measurements. The usefulness of the model for parameter extraction of state of the devices is also demonstrated.
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; technology CAD (electronics); TCAD simulation; UTB SOI MOSFET; asymetrical double gate MOSFET; drain current; electrical measurement; ultra-thin body SOI MOSFET; Analytical models; Logic gates; MOSFETs; Mathematical model; Silicon; Silicon on insulator technology; Compact modeling; FD SOI; SOI; UTB SOI MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744174
Filename
5744174
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