Parallel performance of the PETSc Krylov methods applied to linear systems of 3D nanodevice simulators

Author

Garcia-Rivera, A. ; Valin, R. ; Seoane, N. ; Garcia-Loureiro, A. ; Aldegunde, M.

Author_Institution

Dept. de Electron. e Comput., Univ. de Santiago de Compostela, Santiago de Compostela, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

One of the most demanding part of the 3D simulators is the resolution of the linear systems. The parallel performance of solver methods and preconditioning techniques of the latest PETSc numerical library are presented in this work, taking as a reference linear systems obtained from a 3D MOSFET simulation. We have obtained an important scalability with the number of processors when parallel iterative solvers based on Krylov methods are taken into account.

Keywords

MOSFET; electronic engineering computing; nanoelectronics; parallel processing; semiconductor device models; 3D MOSFET simulation; 3D nanodevice simulators; PETSc Krylov methods; PETSc numerical library; parallel iterative solvers; parallel performance; preconditioning techniques; reference linear systems; Additives; Jacobian matrices; Linear systems; Mathematical model; Numerical models; Program processors; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744175

Filename

5744175