DocumentCode
2857404
Title
Current-voltage characteristics of graphene based devices
Author
Moldovan, Oana ; Jiménez, David
Author_Institution
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
3
Abstract
In this work we present a simple model for computing the current-voltage characteristics of graphene based transistors (G-FETs). Our model is based on a simple treatment of electrostatics and a transport module including both tunneling and thermionic currents, properly capturing the effect of physical and electrical parameters. The predictive behaviour is demonstrated via comparison with experimental measurements of devices.
Keywords
electrostatics; field effect transistors; graphene; G-FET; current-voltage characteristics; electrical parameters; electrostatics; graphene based devices; graphene based field-effect transistors; physical parameters; thermionic currents; transport module; tunneling currents; Biological system modeling; Capacitance; Current measurement; Electrostatics; Logic gates; Transistors; Tunneling; Graphene; field-effect transistor; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744177
Filename
5744177
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