DocumentCode
2857501
Title
Charge transfer in buried-channel charge-coupled devices
Author
Daimon, Y. ; Mohsen, A. ; McGill, Tanya
Author_Institution
California Institute of Technology, Pasadena, CA, USA
Volume
XVII
fYear
1974
fDate
15-13 Feb. 1974
Firstpage
146
Lastpage
147
Abstract
A detailed numerical simulation of the charge-transfer process in buried-channel CCDs will be presented. The limitations on the device performance due to incomplete free charge transfer, device parameters and clocking waveforms will be discussed.
Keywords
Charge coupled devices; Charge transfer; Coupling circuits; Electrodes; Electrons; Integrated circuit technology; Partial differential equations; Poisson equations; Shift registers; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1974.1155317
Filename
1155317
Link To Document