DocumentCode :
2857503
Title :
Improving the firing mechanisms in thyristors for lighting applications
Author :
Flores, D. ; Hidalgo, S. ; Villamor, A. ; Mcquaid, S. ; Mazarredo, I.
Author_Institution :
Inst. de Microelectron. de Barcelona, Barcelona, Spain
fYear :
2011
fDate :
8-11 Feb. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Thyristors to be used in 600 V domestic applications are still very widespread as AC switches or as TRIACs. These devices are typically integrated with very deep diffusions by using solid or liquid doping processes. Thyristors implemented with ion implantation processes exhibit more stable performances and their firing mechanisms are more controllable. In this paper three different thyristor structures are analysed and fabricated with deep and superficial diffusions, comparing the firing behaviour and their stability as a function of process technology characteristics.
Keywords :
doping; ion implantation; lighting; thyristors; AC switches; TRIAC; firing behaviour; firing mechanism; ion implantation; lighting application; liquid doping process; solid doping process; thyristor structures; Doping; Electrodes; Firing; Junctions; Logic gates; Metals; Thyristors; AC Switch; Bilateral switch; Gate trigger; Lighting; Thyristor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
Type :
conf
DOI :
10.1109/SCED.2011.5744182
Filename :
5744182
Link To Document :
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