Emitter diffusion method for extremely thin silicon wafers

Author

Ochoa-Martínez, E. ; Merchán, D. ; Romero, R. ; Gabás, M. ; Martínez, L. ; Martín, F. ; Leinen, D. ; Ramos-Barrado, J.R. ; Vázquez, C. ; Hartiti, B.

Author_Institution

Dipt. de Fis. Aplic. I, Univ. de Malaga, Málaga, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

The aim of this study is to optimize a low cost phosphorus diffusion process suitable for pn junction formation on extremely thin (<;100um) c-Si solar cells. The deposition of the doping layer has been carried out by spray coating of commercial and non-commercial precursors. There have been monitored sheet resistance, effective lifetime and oxygen content in the prepared emitters.

Keywords

carrier lifetime; crystal growth from melt; diffusion; electrical resistivity; elemental semiconductors; minority carriers; p-n junctions; phosphorus; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; spray coatings; Si:P; doping layer; emitter diffusion method; pn junction; sheet resistance; spray coating; thin silicon wafers; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Solar energy; Temperature measurement; c-Si; gettering; phosphorus diffussion; silicon; solar cells; spray coating;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744189

Filename

5744189