Self-Powered ZnO Nanowire UV Photodetector Integrated With GaInP/GaAs/Ge Solar Cell

Author

Jei Li Hou ; Shoou Jin Chang ; Chih Hung Wu ; Ting Jen Hsueh

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

1023

Lastpage

1025

Abstract

This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <;370 nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ~218 and the measured responsivity is 3.39 × 10^-4 A/W. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ~1000.

Keywords

II-VI semiconductors; gallium arsenide; gallium compounds; indium compounds; nanowires; photodetectors; solar cells; ultraviolet detectors; wide band gap semiconductors; zinc compounds; GaInP-GaAs-Ge; UV-to-visible rejection ratio; ZnO; electrical power; self-powered nanowire UV photodetector; solar light; triple-junction solar cell; voltage 2.5 V; Detectors; Gold; Nanoscale devices; Photodetectors; Photovoltaic cells; Zinc oxide; Nanowire (NW); ZnO; photodetector (PD); triple-junction (TJ) solar cell;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2269992

Filename

6555860