DocumentCode :
2857702
Title :
High-density static ESFI MOS memory cells
Author :
Goser, K. ; Pomper, M. ; Tihanyi, J.
Author_Institution :
Siemens AG, Munich, Germany
Volume :
XVII
fYear :
1974
fDate :
15-13 Feb. 1974
Firstpage :
202
Lastpage :
203
Abstract :
A static CMOS memory cell - 2.4 mil2- with high-rated load resistors using epitaxial silicon films on insulators has been developed. A 4k-bit memory integrated on a 12 mm2chip has been found to show a better overall performance than dynamic memories.
Keywords :
CMOS technology; Diodes; Flip-flops; Insulation; Power supplies; Resistors; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1974.1155330
Filename :
1155330
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2857702
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