• DocumentCode
    2857702
  • Title

    High-density static ESFI MOS memory cells

  • Author

    Goser, K. ; Pomper, M. ; Tihanyi, J.

  • Author_Institution
    Siemens AG, Munich, Germany
  • Volume
    XVII
  • fYear
    1974
  • fDate
    15-13 Feb. 1974
  • Firstpage
    202
  • Lastpage
    203
  • Abstract
    A static CMOS memory cell - 2.4 mil2- with high-rated load resistors using epitaxial silicon films on insulators has been developed. A 4k-bit memory integrated on a 12 mm2chip has been found to show a better overall performance than dynamic memories.
  • Keywords
    CMOS technology; Diodes; Flip-flops; Insulation; Power supplies; Resistors; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1974.1155330
  • Filename
    1155330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2857702