Title :
Triple-junction solar cells for ultra-high concentrator applications
Author :
Barrigón, Enrique ; García-Tabarés, Elisa ; García, Iván ; Rey-Stolle, Ignacio ; Algora, Carlos
Author_Institution :
Inst. de Energia Solar, Univ. Politec. de Madrid, Madrid, Spain
Abstract :
After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the structure and a fine tuning of its processing, efficiencies close to 40% at 1000 suns are envisaged.
Keywords :
III-V semiconductors; solar cells; solar energy concentrators; transmission electron microscopy; MOVPE; antiphase disorder; cross-sectional TEM analysis; record performing dual-junction solar cell; semiconductor structure; triple-junction device; triple-junction solar cells; triple-junction structures; ultra-high concentrator applications; Epitaxial growth; Epitaxial layers; Junctions; Photonic band gap; Photovoltaic cells; Resistance; Sun; III-V semiconductors; MOVPE; concentrator solar cells; multijunction solar cell; photovoltaics;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744199