Title :
Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions
Author :
Rodríguez, A. Luque ; Tejada, J. A Jiménez ; Gonzalez, M.Bargallo ; Eneman, G. ; Claeys, C. ; Simoen, E.
Author_Institution :
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain
Abstract :
In this paper, a study of the leakage current through strained p+ n Si1-xGex/Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the Ge content and the recess depth. A comparison between simulation results and experimental data is presented to analyze the suitability of the models used in this work. An optimization study to decrease the band-to-band tunneling component in the leakage current as a function of these two technological parameters is presented.
Keywords :
elemental semiconductors; energy gap; leakage currents; optimisation; semiconductor doping; semiconductor heterojunctions; silicon; silicon compounds; tunnelling; Si1-xGex-Si; band gap; band-to-band tunneling current; doping level; halo implantations; leakage current; optimization; recess depth dependence; strained p+ n heterojunctions; stress forces; Electric fields; Junctions; Leakage current; Photonic band gap; Silicon; Silicon germanium; Tunneling; band-to-band tunneling; imulation of electronic devices; leakage current; strain engineering;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744201
