Title :
Properties and potential of BARITT devices
Author :
Siang-Ping Kwok ; Nguyen-Ba, H. ; Haddad, G.
Author_Institution :
University of Michigan, Ann Arbor, MI, USA
Abstract :
The properties and potential of Baritt devices with regard to power output, efficiency and noise will be presented, The effects of doping and material parameters will be described, and experimental results on X-band devices offered.
Keywords :
Doppler radar; Electron mobility; Frequency modulation; Gallium arsenide; Gunn devices; Impurities; Neodymium; Numerical simulation; Radar detection; Signal detection;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155345
