• DocumentCode
    2857958
  • Title

    Hydrodynamic device simulation of 200 GHz SiGe heterojunction bipolar transistors

  • Author

    López-González, Juan M.

  • Author_Institution
    Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper studies the effect of hydrodynamic relaxation times on the base and collector currents, IB, and IC, and ac figures of merit, cut-off frequency fT, and maximum oscillation frequency, fmax, for 200 GHz SiGe heterojunction bipolar transistors (HBTs).
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; HBT; SiGe; heterojunction bipolar transistors; hydrodynamic device simulation; hydrodynamic relaxation times; Cutoff frequency; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Impact ionization; Mathematical model; Silicon germanium; Heterojuntion bipolar transistor; SiGe semiconductor; hydrodynamic device simulation; impact ionization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744208
  • Filename
    5744208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2857958