Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

Author

García, H. ; Castán, H. ; Gómez, A. ; Duenas, S. ; Bailón, L. ; Kukli, K. ; Kariniemi, M. ; Kemell, M. ; Niinistö, J. ; Ritala, M. ; Leskelä, M.

Author_Institution

Dipt. de Electr. y Electron., Univ. de Valladolid, Valladolid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

SrTiO₃-based MIM capacitors were electrically characterized. Strontium titanate thin films were grown by atomic layer deposition using Sr(ⁱPr₃Cp)₂ and (CpMe₅)Ti(OMe)₃ as strontium and titanium precursors and H₂O and O₃ as oxygen precursors. The temperatures used to grow the high-k films were 250 and 300 °C. The films were amorphous in the as-deposited state. The lowest CET values were achieved in the films grown using ozone at 300 °C. Leakage current is lower when samples were grown at 250 °C and when were grown using O₃ as oxygen precursor.

Keywords

MIM devices; amorphous semiconductors; atomic layer deposition; high-k dielectric thin films; leakage currents; semiconductor growth; semiconductor thin films; thin film capacitors; CET value; MIM capacitor; SrTiO₃; amorphous film; atomic layer deposition; growth temperature; high-k film; leakage current; oxygen precursor; ozone; strontium titanate thin film; temperature 250 C; temperature 300 C; Annealing; Atomic layer deposition; Films; Leakage current; Strontium; Temperature measurement; Water; Atomic Layer Deposition; DRAM memories; Electrical properties; MIM capacitors; Strontium titanate;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744209

Filename

5744209